Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Dimastrodonato, V ^a   Mereni, L O ^a   Juska, G ^a   Pelucchi, E ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED NITRIDES; EXCITON LIFETIME; FINE STRUCTURE SPLITTING; GAAS; METAL-ORGANIC VAPOR PHASE EPITAXY; MICROPHOTOLUMINESCENCE; NEUTRAL EXCITONS; NITROGEN INCORPORATION; QUANTUM DOT;

EPITAXIAL GROWTH; EXCITONS; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; VAPORS;

GALLIUM ALLOYS;

EID: 77956016302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3481675     Document Type: Article

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