Diode-pumped short pulse passively Q-switched 912 nm Nd:GdVO 4/Cr:YAG laser at high repetition rate operation

Laser Physics

Volumn 20, Issue 6, 2010, Pages 1275-1278

  Chen, F ^a   Yu, X ^a   Wang, C ^a   Yan, R P ^a   Li, X D ^a   Gao, J ^b   Zhang, Z H ^a   Yu, J H ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SUZHOU INSTITUTE OF BIOMEDICAL ENGINEERING AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBED PUMP POWER; CR:YAG CRYSTAL; DIODE END-PUMPED; DIODE-PUMPED; HIGH REPETITION RATE; LASER PERFORMANCE; ND:GDVO; OPTICAL EFFICIENCY; OUTPUT POWER; PASSIVELY Q-SWITCHED; PEAK POWER; REPETITION RATE; SATURABLE ABSORBERS; SHORT PULSE; SHORT-PULSED; SLOPE EFFICIENCIES; YAG; YAG LASER;

CHROMIUM; NEODYMIUM; PULSE REPETITION RATE; PULSED LASERS; PUMPING (LASER); Q SWITCHING;

PULSED LASER APPLICATIONS;

EID: 77955921126     PISSN: 1054660X     EISSN: 15556611     Source Type: Journal    
DOI: 10.1134/S1054660X10070042     Document Type: Article

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