The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering

Journal of Alloys and Compounds

Volumn 505, Issue 2, 2010, Pages 623-627

  Li, Y Z ^a,b   Gao, X D ^a   Yang, C ^a,b   Huang, F Q ^a,b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Copper selenide thin films; Electrical resistivity; Magnetron sputtering; Optical band gap

Indexed keywords

AS-DEPOSITED FILMS; COPPER SELENIDE; COPPER SELENIDE THIN FILMS; CRYSTALLINITIES; ELECTRICAL CONDUCTIVITY; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE; ROOM TEMPERATURE; SPUTTERING POWER;

ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION;

COPPER;

EID: 77955917557     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.06.094     Document Type: Article

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