Through-silicon via technologies for interconnects in RF MEMS

Microsystem Technologies

Volumn 16, Issue 7, 2010, Pages 1045-1049

  Zhu, Jian ^a,b   Yu, Yuanwei ^a,b   Hou, Fang ^a   Chen, Chen ^a,b  

^a NANJING ELECTRONIC DEVICES INSTITUTE   (China)

^b National Key Laboratory of Monolithic Integrated Circuits and Modules   (China)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; AMPLITUDE VARIATIONS; CHIP SIZES; KU BAND; MEASURED RESULTS; MICRO ELECTRO MECHANICAL SYSTEM; MICROMACHINED; MILLIMETER-WAVE INTEGRATED CIRCUITS; RADIO FREQUENCIES; RF-MEMS; THREE-LAYER; THROUGH-SILICON VIA; VERTICAL TRANSITIONS; WAFER THINNING TECHNOLOGY;

COMPOSITE MICROMECHANICS; MICROELECTROMECHANICAL DEVICES; SILICON WAFERS; WAFER BONDING;

BANDPASS FILTERS;

EID: 77955851392     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-009-1013-0     Document Type: Conference Paper

References (8)

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