An Easy to Use PSPICE Model for Power Transistors in RF Switching Operation and Including Voltage Dependent Output Capacitance

53rd ARFTG Conference Digest Spring 1999: Automatic RF Techniques Group: Nonlinearity Characterization, ARFTG Spring 1999

Volumn , Issue , 1999, Pages

  Mediano, Arturo ^a   Molina, Pilar ^a   Navarro, Jesús ^a  

^a UNIVERSITY OF ZARAGOZA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE MEASUREMENT; POWER AMPLIFIERS; POWER TRANSISTORS; RADIO FREQUENCY AMPLIFIERS; TOPOLOGY; TRANSISTORS;

CLASSICAL METHODS; EXPERIMENTAL VERIFICATION; EXTENDED VERSIONS; HIGH-EFFICIENCY; PSPICE MODELS; RF POWER AMPLIFIERS; RF SWITCHING; VOLTAGE VARIABLE CAPACITANCE;

CAPACITANCE;

EID: 77955747029     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTG.1999.327330     Document Type: Conference Paper

References (7)

1. A. Mediano, "Contribución al estudio de los amplificadores de potencia de RF clase E. Influencia de la capacidad de salida del dispositivo activo", Ph. D. Thesis2, Department of Electronics and Communications Engineering, University of Zaragoza, Spain, September 1997.
2. N. O. Sokal and Richard Redl, "Power Transistor Output Port Model for Analyzing a Switching-Mode RF Power Amplifier or Resonant Power Converter", RF Design, VOL. 10, NO. 6, pp. 45-48, 50, 51, 53, June 1987.
3. PSPICE 5. 0 Evaluation version, Microsim Corporation, 20 Fairbanks, Irvine CA 92718, USA.
4. L. Meares, "SPICE Models NonLinear Capacitors", EDN Magazine Design Ideas, p. 106, October 1993.
5. "Voltage dependent capacitance characterisation of power transistors for high efficiency switching amplifiers", To be published.
6. N. O. Sokal & A. D. Sokal, "Class E-a new class of high-efficiency tuned single-ended switching power amplifiers", IEEE Journal on Solid State Circuits, VOL. SC-10, NO. 3, pp. 168-176, June 1975.
7. J. C. Bowers and H. A. Nienhaus, "SPICE-2 computer Models for HEXFETs", Application Note 954, HEXFET DATA BOOK, Power MOSFET Application and Product Data, pp. A153-A160, International Rectifier Corp., Semiconductor Div., El Segundo, CA, 1985.