Raman study of stress effect on Ge nanocrystals embedded in Al 2O3

Thin Solid Films

Volumn 518, Issue 19, 2010, Pages 5378-5381

  Pinto, S R C ^a   Rolo, A G ^a   Chahboun, A ^a,b   Kashtiban, R J ^c   Bangert, U ^c   Gomes, M J M ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Aluminium oxide; Germanium; Nanocrystals; Raman spectroscopy; Stress; Transmission electron microscopy

Indexed keywords

ALUMINIUM OXIDE; GE NANOCRYSTALS; MATRIX; RAMAN STUDIES; RF-SPUTTERING; STRESS EFFECTS; TRANSMISSION ELECTRON;

ALUMINUM; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; GERMANIUM; GERMANIUM OXIDES; NANOCRYSTALS; OXIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77955662199     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.03.035     Document Type: Article

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