Recent advances in submicron alignment 300 mm copper-copper thermocompressive face-to-face wafer-to-wafer bonding and integrated infrared, high-speed FIB metrology

2010 IEEE International Interconnect Technology Conference, IITC 2010

Volumn , Issue , 2010, Pages

  Teh, W H ^a   Deeb, C ^a   Burggraf, J ^b   Wimplinger, M ^b   Matthias, T ^b   Young, R ^c   Senowitz, C ^c   Buxbaum, A ^c  

^a INTEL CORPORATION   (United States)

^b EV GROUP   (Austria)

^c Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; 300 MM WAFERS; BONDING QUALITY; BONDING STRUCTURE; CHARACTERIZATION STUDIES; CU BONDINGS; ELECTRON BACK SCATTER DIFFRACTION; EXPERIMENTAL STUDIES; FOCUSED ION BEAM TECHNIQUE; HIGH-SPEED; INFRA RED; INTER-DIFFUSION; INTERFACIAL VOIDS; LASER SCANNING MICROSCOPY; ROADMAP; SCANNING ACOUSTIC MICROSCOPY; SITE-SPECIFIC; SUBMICRON; TEM; THERMO COMPRESSION BONDING; WAFER TO WAFER BONDING;

ALIGNMENT; COPPER; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

EID: 77955643176     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2010.5510387     Document Type: Conference Paper

References (6)

1. P.R. Morrow et. al., "Three-Dimensional Wafer Stacking Via Cu-Cu Bonding Integrated With 65-nm Strained-Si/Low-k CMOS Technology," IEEE Elec. Dev. Lett. 27(5), p. 335, 2006.
2. J. Van Olmen et. al., "3D Stacked IC demonstrator using Hybrid Collective Die-to-Wafer Bonding with copper Through Silicon Vias (TSV)," 3DIC 2009.
3. P. Gueguen et. al., "Copper direct bonding for 3D integration," IITC 2008
4. F. Liu et. al., "A 300-mm Wafer-Level Three-Dimensional Integration Scheme Using Tungsten Through-Silicon Via and Hybrid Cu-Adhesive Bonding," IEDM 2008
5. W.H. Teh et. al., "200-mm Wafer-Scale Transfer of 0.18-μm Dual-Damascene Cu/SiO2 Interconnection System to Plastic Substrates," IEEE Elec. Dev. Lett. 26(11), p. 802, 2005.
6. 2007 ITRS Roadmap- Interconnect Emerging Technologies Section