High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ∼1.55 μm

Optics Express

Volumn 18, Issue 16, 2010, Pages 16474-16479

  Joo, Jiho ^a,b   Kim, Sanghoon ^a   Kim, In Gyoo ^a   Jang, Ki Seok ^a   Kim, Gyungock ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SILICON;

10 GBPS; 3 DB BANDWIDTH; DATA RATES; EXTERNAL QUANTUM EFFICIENCY; GE-ON-SI PHOTODETECTORS; HIGH-SENSITIVITY; P-I-N PHOTODETECTORS; PHOTORECEIVERS; RESPONSIVITY;

GERMANIUM;

GERMANIUM; NANOPARTICLE; SILICON;

ARTICLE; ELECTRONICS; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; OPTICS; SEMICONDUCTOR;

ELECTRONICS; EQUIPMENT DESIGN; GERMANIUM; LIGHT; NANOPARTICLES; OPTICS AND PHOTONICS; SEMICONDUCTORS; SILICON;

EID: 77955602979     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.016474     Document Type: Article

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