-
1
-
-
0001612587
-
Fractional-frequency generators utilizing regenerative modulation
-
Jul.
-
R. L. Miller, "Fractional-frequency generators utilizing regenerative modulation," Proc. IRE, vol.27, no.7, pp. 446-457, Jul. 1939.
-
(1939)
Proc. IRE
, vol.27
, Issue.7
, pp. 446-457
-
-
Miller, R.L.1
-
2
-
-
0023981740
-
7.3-GHz dynamic frequency dividers monolithically integrated in a standard bipolar technology
-
Mar.
-
R. H. Derksen and H. M. Rein, "7.3-GHz dynamic frequency dividers monolithically integrated in a standard bipolar technology," IEEE Trans. Microw. Theory Tech., vol.36, no.3, pp. 537-541, Mar. 1988.
-
(1988)
IEEE Trans. Microw. Theory Tech.
, vol.36
, Issue.3
, pp. 537-541
-
-
Derksen, R.H.1
Rein, H.M.2
-
3
-
-
0026238496
-
Stability ranges of regenerative frequency dividers employing double balanced mixers in largesignal operation
-
Oct.
-
R. H. Derksen, V. Luck, and H. M. Rein, "Stability ranges of regenerative frequency dividers employing double balanced mixers in largesignal operation," IEEE Trans. Microw. Theory Tech., vol.39, no.10, pp. 1759-1762, Oct. 1991.
-
(1991)
IEEE Trans. Microw. Theory Tech.
, vol.39
, Issue.10
, pp. 1759-1762
-
-
Derksen, R.H.1
Luck, V.2
Rein, H.M.3
-
4
-
-
0037461882
-
100 GHz dynamic frequency divider in SiGe bipolar technology
-
Jan.
-
A. Rylyakov, L. Klapproth, B. Jagannathan, and G. Freeman, "100 GHz dynamic frequency divider in SiGe bipolar technology," Electron. Lett., vol.39, pp. 217-218, Jan. 2003.
-
(2003)
Electron. Lett.
, vol.39
, pp. 217-218
-
-
Rylyakov, A.1
Klapproth, L.2
Jagannathan, B.3
Freeman, G.4
-
5
-
-
33847026104
-
Low power frequency dividers in SiGe:C BiCMOS technology
-
Jan.
-
L. Wang, Y.-M. Sun, J. Borngraeber, A. Thiede, and R. Kraemer, "Low power frequency dividers in SiGe:C BiCMOS technology," in Proc. IEEE Topical Meeting Silicon Monolithic Integrated Circuits, Jan. 2006, pp. 357-360.
-
(2006)
Proc. IEEE Topical Meeting Silicon Monolithic Integrated Circuits
, pp. 357-360
-
-
Wang, L.1
Sun, Y.-M.2
Borngraeber, J.3
Thiede, A.4
Kraemer, R.5
-
6
-
-
0038046539
-
108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology
-
Jun.
-
O. Kappeler, A. Leuther,W. Benz, and M. Schlechtweg, "108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology," Electron. Lett., vol.39, pp. 989-990, Jun. 2003.
-
(2003)
Electron. Lett.
, vol.39
, pp. 989-990
-
-
Kappeler, O.1
Leuther, A.2
Benz, W.3
Schlechtweg, M.4
-
7
-
-
0043094035
-
86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology
-
Jun.
-
H. Knapp et al., "86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology," in Proc.IEEE Int. Microwave Symp., Jun. 2003, pp. 1067-1070.
-
(2003)
Proc.IEEE Int. Microwave Symp.
, pp. 1067-1070
-
-
Knapp, H.1
-
9
-
-
34250363175
-
A new regenerative divider by four up to 160 GHz in SiGe bipolar technology
-
Jun.
-
S. Trotta et al., "A new regenerative divider by four up to 160 GHz in SiGe bipolar technology," in Proc. IEEE Int. Microwave Symp., Jun. 2006, pp. 1709-1712.
-
(2006)
Proc. IEEE Int. Microwave Symp.
, pp. 1709-1712
-
-
Trotta, S.1
-
10
-
-
72449211113
-
168 GHz dynamic frequency divider in SiGe:C bipolar technology
-
Oct.
-
H. Knapp et al., "168 GHz dynamic frequency divider in SiGe:C bipolar technology," in IEEE BCTM Dig., Oct. 2009, pp. 190-193.
-
(2009)
IEEE BCTM Dig
, pp. 190-193
-
-
Knapp, H.1
-
11
-
-
70349402392
-
A 128.24-to-137.00 GHz injection- locked frequency divider in 65 nm CMOS
-
Feb.
-
B.-Y. Lin, K.-H. Tsai, and S.-I. Liu, "A 128.24-to-137.00 GHz injection- locked frequency divider in 65 nm CMOS," in ISSCC Dig. Tech. Papers, Feb. 2009, pp. 282-283.
-
(2009)
ISSCC Dig. Tech. Papers
, pp. 282-283
-
-
Lin, B.-Y.1
Tsai, K.-H.2
Liu, S.-I.3
-
12
-
-
0346305066
-
A 150-GHz dynamic frequency divider using InP/InGaAs DHBTs
-
Nov.
-
S. Tsunashima et al., "A 150-GHz dynamic frequency divider using InP/InGaAs DHBTs," in IEEE GaAs IC Symp. Dig., Nov. 2003, pp. 284-287.
-
(2003)
IEEE GaAs IC Symp. Dig.
, pp. 284-287
-
-
Tsunashima, S.1
|