Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 36, 2010, Pages 3758-3761

  Ying, Yibo ^a   Jin, Guojun ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Quantum dot; Spin valve; Tunnel magnetoresistance

Indexed keywords

MAGNETIC DEVICES; NANOCRYSTALS; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS; SPIN POLARIZATION;

FERROMAGNETIC ELECTRODES; OPTICALLY INDUCED; QUANTUM DOT TRANSISTORS; SPIN POLARIZED TRANSPORT; SPIN VALVE; SPIN VALVE EFFECT; SPIN-ACCUMULATIONS; TUNNEL MAGNETORESISTANCE;

TUNNELLING MAGNETORESISTANCE;

EID: 77955553994     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2010.07.026     Document Type: Article

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