Advanced lithography - Wafer defect scattering analysis at DUV

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7638, Issue , 2010, Pages

  Meshulach, Doron ^a   Dolev, Ido ^a   Yamazaki, Yuuichiro ^b   Tsuchiya, Kenji ^b   Kaneko, Makoto ^b   Yoshino, Kiminori ^b   Fujii, Takayoshi ^b  

^a Applied Materials Inc Israel   (Israel)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

DUV; Inspection; Light scattering; Lithography; Polarization

Indexed keywords

ADVANCED LITHOGRAPHY; DEFECT DETECTION; DEFECT SCATTERING; DEFECT TYPE; DESIGN RULES; DETECTION LIMITS; DETECTION SENSITIVITY; DUV; DUV WAVELENGTH; ENHANCED SCATTERING; HIGH SENSITIVITY; INSPECTION SYSTEM; LITHOGRAPHY PROCESS; MOORE'S LAW; NEXT GENERATION LITHOGRAPHY; OPTICAL INSPECTION SYSTEMS; OPTICS SYSTEMS; PROCESS WINDOW; RESIST STRUCTURES; ROOT CAUSE; UV- AND; WAFER FABRICATIONS; WAFER INSPECTION;

DEFECTS; DESIGN; INSPECTION; INSPECTION EQUIPMENT; LIGHT; LIGHT SCATTERING; LIGHT SOURCES; OPTICAL TESTING; OPTICS; POLARIZATION; PROCESS CONTROL; REFRACTION; SCATTERING; UNITS OF MEASUREMENT;

LITHOGRAPHY;

EID: 77955541808     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.848326     Document Type: Conference Paper

References (6)

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