Characterization of SiC JFETs and its application in extreme temperature (over 450°C) circuit design

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 949-952

  Yang, J ^a   Fraley, J ^a   Western, B ^a   Schupbach, M ^a   Lostetter, A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Device characterization; SiC JFET; Spice model and extreme temperature

Indexed keywords

DIFFERENTIAL AMPLIFIERS; INTEGRATED CIRCUIT MANUFACTURE; JUNCTION GATE FIELD EFFECT TRANSISTORS; SILICON CARBIDE; TIMING CIRCUITS; VIBRATORS;

CIRCUIT DESIGNS; DEVICE CHARACTERIZATION; EXTREME TEMPERATURES; ITS APPLICATIONS; SIC JFET; SIMULATION PACKAGES; SPICE MODELING; TEMPERATURE RANGE;

SPICE;

EID: 77955437477     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.949     Document Type: Conference Paper

References (4)

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3. W. Wong, and J. Liou: CAD of Integrated Circuits and Systems, IEEE Trans., Vol 13, Issue 1 (1994) pp 105-109.
4. L. Su, et al., IEEE Electron Device Letters, Vol 15, Issue 10 (1994), pp 374-376. doi:10.1109/55.320972.