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Volumn 81, Issue 15, 2010, Pages

Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

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EID: 77955396224     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.153302     Document Type: Article
Times cited : (15)

References (26)
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    • Silsbee, R.H.1
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    • 34347326170 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.75.201305
    • M. Duckheim and D. Loss, Phys. Rev. B 75, 201305 (R) (2007). 10.1103/PhysRevB.75.201305
    • (2007) Phys. Rev. B , vol.75 , pp. 201305
    • Duckheim, M.1    Loss, D.2
  • 18
    • 77955349283 scopus 로고    scopus 로고
    • We checked that grating behavior of the arrays did not influence Kerr signals by rotating the polarization planes of the pump and probe beam around their axes.
    • We checked that grating behavior of the arrays did not influence Kerr signals by rotating the polarization planes of the pump and probe beam around their axes.
  • 20
    • 77955389700 scopus 로고    scopus 로고
    • We observe that using phases as free parameters is needed for obtaining good fits. We only use data from delays t>5 ps since holes contribute to the Kerr signals up to t≈5 ps. For t<5 ps there is also rapid relaxation of electron kinetic energy, which can contribute to apparent phase offsets for t>5 ps (Ref.).
    • We observe that using phases as free parameters is needed for obtaining good fits. We only use data from delays t > 5 ps since holes contribute to the Kerr signals up to t ≈ 5 ps. For t < 5 ps there is also rapid relaxation of electron kinetic energy, which can contribute to apparent phase offsets for t > 5 ps (Ref.).
  • 23
    • 77955378358 scopus 로고    scopus 로고
    • We analyzed that SOI due to possible presence of wire-induced strain cannot explain the observed SDA.
    • We analyzed that SOI due to possible presence of wire-induced strain cannot explain the observed SDA.
  • 24
    • 77955383417 scopus 로고    scopus 로고
    • As compared to the 2DEG case, where the slope in V for the GaAs layer is compensated by the steep increase in V at the heterojunction since 2DEG states penetrate the AlGaAs layer [Fig. ].
    • As compared to the 2DEG case, where the slope in V for the GaAs layer is compensated by the steep increase in V at the heterojunction since 2DEG states penetrate the AlGaAs layer [Fig.].
  • 25
    • 33646362277 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.96.177401
    • G. Salis and S. F. Alvarado, Phys. Rev. Lett. 96, 177401 (2006). 10.1103/PhysRevLett.96.177401
    • (2006) Phys. Rev. Lett. , vol.96 , pp. 177401
    • Salis, G.1    Alvarado, S.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.