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Volumn 81, Issue 15, 2010, Pages

Electron density and transport in top-gated graphene nanoribbon devices: First-principles Green function algorithms for systems containing a large number of atoms

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EID: 77955349374     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.155450     Document Type: Article
Times cited : (66)

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    • Although metal induced gap states do not affect the transmission for long channel devices at linear response bias voltage, they are expected to contribute to tunneling currents, particularly in short channel devices. In fact, they can also affect longer channel devices by enhancing scattering processes under high source-drain bias voltage
    • Although metal induced gap states do not affect the transmission for long channel devices at linear response bias voltage, they are expected to contribute to tunneling currents, particularly in short channel devices. In fact, they can also affect longer channel devices by enhancing scattering processes under high source-drain bias voltage.


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