Structural and electronic properties of the methyl-terminated Si(111) surface

Journal of Physical Chemistry C

Volumn 114, Issue 27, 2010, Pages 11898-11902

  Aliano, Antonio ^a   Li, Yan ^b   Cicero, Giancarlo ^a   Galli, Giulia ^b  

^a POLITECNICO DI TORINO   (Italy)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; CURRENT VOLTAGE; DISPERSION FORCE; FIRST-PRINCIPLES CALCULATION; MANY BODY PERTURBATION THEORY; METHYL GROUP; RESONANT STATE; SCANNING TUNNELING MICROSCOPY (STM); SELF-ENERGY CORRECTIONS; SEMI-EMPIRICAL; SI (1 1 1); SI SUBSTRATES; SUBSTRATE INTERACTION; SYMMETRIC PATTERNS; THREE-FOLD SYMMETRY; TUNNELING CURRENT;

ELECTRON DIFFRACTION; ELECTRONIC PROPERTIES; HYDROCARBONS; PERTURBATION TECHNIQUES; SCANNING TUNNELING MICROSCOPY; SILICON;

DENSITY FUNCTIONAL THEORY;

EID: 77955317698     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp102028z     Document Type: Article

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