WORM memory devices based on conformation change of a PVK derivative with a rigid spacer in side chain

Materials Chemistry and Physics

Volumn 123, Issue 2-3, 2010, Pages 685-689

  Liu, Yuanhua ^a   Li, Najun ^a   Xia, Xuewei ^a   Xu, Qingfeng ^a   Ge, Jianfeng ^a   Lu, Jianmei ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

Electrical properties; Electronic materials; Polymers; Thin films

Indexed keywords

4-VINYLBENZYL; CARBAZOLE GROUPS; CONFORMATION CHANGE; ELECTRICAL BISTABLE; ELECTRICAL PROPERTY; ELECTRONIC MATERIALS; FABRICATED DEVICE; FLUORESCENCE EMISSION SPECTRA; HIGH STABILITY; LOW TRANSITION; LOW-POWER CONSUMPTION; MEMORY DEVICE; NON-VOLATILE; NON-VOLATILE MEMORIES; ON/OFF CURRENT RATIO; POTENTIAL APPLICATIONS; PRODUCTION COST; READ-CYCLE; RETENTION TIME; SIDE CHAINS; WRITE-ONCE-READ-MANY;

EMISSION SPECTROSCOPY; FABRICATION; MATERIALS PROPERTIES; POLYMERS; THIN FILMS; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 77955315193     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.05.037     Document Type: Article

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