TSV stress testing and modeling

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 1273-1280

  Amagai, Masazumi ^a   Suzuki, Yutaka ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D INTERCONNECT; CMOS CHIPS; DIGITAL IMAGE; EMERGING TECHNOLOGIES; FINITE-ELEMENT METHOD MODELING; MEASUREMENT SETUP; OPTIMUM COMBINATION; POWER CONSUMPTION; PROCESSING EFFECTS; SEMI-CONDUCTOR WAFER; STRESS PROFILE; STRESS SENSOR; STRESS TESTING; TEST ELEMENT GROUPS; THROUGH SILICON VIAS;

COMPUTER CRIME; DIGITAL IMAGE STORAGE; FINITE ELEMENT METHOD; INTEGRATION; MILITARY PHOTOGRAPHY; SILICON WAFERS; THREE DIMENSIONAL;

TECHNOLOGY;

EID: 77955225792     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490650     Document Type: Conference Paper

References (5)

1. Hitachi ULSI manual
2. General relationship between contact stiffness, contact depth, and mechanical properties for indentation in linear viscoelastic solids using axisymmetric indenters of arbitrary profiles Yang-Tse Chenga. (Received 22 February 2005; accepted 22 July 2005; published online 9 September 2005)
3. Nano-indentation of polymeric Surfaces B J Briscoey, L Fiori and E Pelillo Chemical Engineering and Chemical Technology Department, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BY, UK Received 29 January 1998
4. Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy C. Okoro1,2, Y. Yang1,3 I.DeWolf1,3 987-1-4244-1911-1/08/$25.00 ©2008 IEEE
5. Accurate measurement of tip-sample contact size during Nanoindentation of viscoelastic materials B. Tang and A.H.W. Ngan Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China (Received 5 November 2002; accepted 6 February 2003)