Integrated Al2O3:Er3+ Zero-loss optical amplifier and power splitter with 40-nm bandwidth

IEEE Photonics Technology Letters

Volumn 22, Issue 5, 2010, Pages 278-280

  Bradley, Jonathan D B ^a   Stoffer, Remco ^b   Bakker, Arjen ^b   Agazzi, Laura ^a   Ay, Feridun ^a   Wörhoff, Kerstin ^a   Pollnau, Markus ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PhoeniX BV   (Netherlands)

Author keywords

Aluminum oxide; Erbium; Integrated optics; Integrated waveguide device; Optical amplifier

Indexed keywords

ALUMINUM OXIDE; ALUMINUM OXIDES; INTEGRATED WAVEGUIDES; LOSSLESS; NET GAIN; OPTICAL AMPLIFIER; POWER SPLITTERS; PUMP POWER; TELECOM; WAVELENGTH RANGES;

ALUMINUM; ERBIUM; LIGHT AMPLIFIERS; OPTICAL MATERIALS; OPTICAL SWITCHES; OXIDES; PHOTONICS; WAVEGUIDE COMPONENTS;

INTEGRATED OPTICS;

EID: 77955212263     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2037927     Document Type: Article

References (11)

1. P. Camy, J. E. Romàn, F. W. Willems, M. Hempstead, J. C. van der Plaats, C. Prel, A. Béguin, A. M. J. Koonen, J. S. Wilkinson, and C. Lerminiaux, "Ion-exchanged planar lossless splitter at 1.5 μm" Electron. Lett., vol. 32, no. 4, pp. 321-323, 1996.
2. D. Barbier, M. Rattay, F. S. André, G. Clauss, M. Trouillon, A. Kevorkian, J.-M. P. Delavaux, and E. Murphy, "Amplifying four-wavelength combiner, based on erbium/ytterbium-doped waveguide amplifiers and integrated splitters," IEEE Photon. Technol. Lett., vol. 9, no. 3, pp. 315-317, Mar. 1997.
3. M. W. Sckerl, S. Guldberg-Kjaer, C. Laurent-Lund, and M. R. Poulsen, "Loss-less planar waveguide 1:4 power splitter at 1550 nm," in Proc. 25th Eur. Conf. Opt. Commun., Nice, France, 1999, pp. 48-49.
4. Y. Jaouën, L. du Mouza, D. Barbier, J.-M. Delavaux, and P. Bruno, "Eight-wavelength Er-Yb doped amplifier: Combiner/splitter planar integrated module," IEEE Photon. Technol. Lett., vol. 11, no. 9, pp. 1105-1107, Sep. 1999.
5. 3+ co-doped waveguide amplifier and lossless power splitter fabricated by a two-step ion exchange on a commercial phosphate glass," J. Korean Phys. Soc., vol. 49, no. 5, pp. 2159-2163, 2006.
6. 3+ optical amplifiers on silicon," J. Opt. Soc. Amer. B, vol. 27, no. 2, pp. 187-196, Feb. 2010.
7. 3+ waveguides with 5.4-dB optical gain," IEEE J. Quantum Electron., vol. 45, no. 5, pp. 454-461, May 2009.
8. 3 layers by inductively coupled plasma reactive ion etching," Appl. Phys. B, vol. 89, no. 2-3, pp. 311-318, 2007.
9. 3 waveguide devices: Part II-s-shaped channel waveguide bends," J. Lightw. Technol., vol. 7, no. 7, pp. 1016-1022, Jul. 1989.
10. M. Hoekman, "A characterization technique for loss in arbitrarily shaped IO waveguiding structures using camera imgaing," Internal Communication, 2009.
11. PhoeniX. [Online]. Available: http://www.phoenixbv.com.