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Volumn , Issue , 2010, Pages 379-382

Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED SYSTEMS; ELECTRICAL MODELS; ELECTRO-THERMAL MODELING; ELECTRO-THERMAL SIMULATION; EXPERIMENTAL CHARACTERISTICS; LATCH-UPS; PHYSICAL MODEL; SECOND ORDER EFFECT; SHORT-CIRCUIT CONDITIONS; SINGLE CELLS; TEMPERATURE DEPENDENT; THERMAL MAPS; THERMAL SIMULATORS; TIME DEPENDENT; UNIT CELL MODELS;

EID: 77955189559     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2010.5490459     Document Type: Conference Paper
Times cited : (21)

References (13)
  • 1
    • 0029345913 scopus 로고
    • Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistor
    • F. Udrea and G. A. J. Amaratunga, "Theoretical and Numerical Comparison Between DMOS and Trench Technologies for Insulated Gate Bipolar Transistor," IEEE Transaction on Electron Devices, 1995, vol. 42, pp. 1356-1366.
    • (1995) IEEE Transaction on Electron Devices , vol.42 , pp. 1356-1366
    • Udrea, F.1    Amaratunga, G.A.J.2
  • 5
    • 33749910742 scopus 로고    scopus 로고
    • Modeling and simulation of self-heating and/or degradation effects for the IGBT transistor
    • Lille, France, July 9-12
    • A. Amimi, R. Bouchakour, and T. Maurel, "Modeling and simulation of self-.heating and/or degradation effects for the IGBT transistor," in Proc. PESA'96 Symp. Modeling, Anal., Simulation, Lille, France, July 9-12, pp. 855-860.
    • Proc. PESA'96 Symp. Modeling, Anal., Simulation , pp. 855-860
    • Amimi, A.1    Bouchakour, R.2    Maurel, T.3
  • 7
    • 0025511147 scopus 로고
    • Analytical modeling of device-circuit interactions for the power Insulated Gate Bipolar Transistor (IGBT)
    • November/Dicember
    • A. Hefner, "Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Transaction on Industry Applications, vol. 26, No. 6, November/Dicember 1990.
    • (1990) IEEE Transaction on Industry Applications , vol.26 , Issue.6
    • Hefner, A.1
  • 8
    • 0028386039 scopus 로고
    • A dynamic electro-thermal model for the IGBT
    • March/April
    • A. Hefner, "A Dynamic Electro-Thermal Model for the IGBT, "IEEE Transactions on Industry Applications, vol. 30, no. 2, pp 394-405, March/April 1994.
    • (1994) IEEE Transactions on Industry Applications , vol.30 , Issue.2 , pp. 394-405
    • Hefner, A.1
  • 11
    • 0025646928 scopus 로고
    • An investigation of the drive circuit requirements for the power Insulated Gate Bipolar Transistor (IGBT)
    • A. R. Hefner, "An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)," in Conf. Rec. IEEE Power Electron. Specialists Conf., p. 126, 1990.
    • (1990) Conf. Rec. IEEE Power Electron. Specialists Conf. , pp. 126
    • Hefner, A.R.1
  • 12
    • 33745700885 scopus 로고    scopus 로고
    • Theory of electrothermal behavior of bipolar transistors: Part III- Impact ionization
    • July
    • N. Rinaldi and V. d'Alessandro, "Theory of electrothermal behavior of bipolar transistors: Part III-Impact Ionization," IEEE Trans. Electron Devices, vol. 53, no. 7, pp. 1683-1697, July 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.7 , pp. 1683-1697
    • Rinaldi, N.1    D'Alessandro, V.2
  • 13
    • 34548689885 scopus 로고    scopus 로고
    • 3, a tool for 3D electro-thermal simulation of smart power MOSFETs
    • 3, a tool for 3D electro-thermal simulation of smart power MOSFETs," Microelectronics Reliability, 47 (2007) pp. 1696-1700.
    • Microelectronics Reliability , vol.47 , Issue.2007 , pp. 1696-1700
    • Irace, A.1    Breglio, G.2    Spirito, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.