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Volumn 97, Issue 2, 2010, Pages

Asymmetric heterostructure for photovoltaic InAs quantum dot infrared photodetector

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; ASYMMETRIC HETEROSTRUCTURE; DETECTIVITY; INAS QUANTUM DOTS; INGAAS QUANTUM WELLS; INJECTION SCHEMES; MODULATION-DOPED; PEAK RESPONSIVITY; QUANTUM DOT; RESPONSIVITY;

EID: 77955147685     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462960     Document Type: Article
Times cited : (26)

References (19)
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  • 7
    • 14944375380 scopus 로고    scopus 로고
    • 0.7As layer
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    • (2005) Microelectronic Engineering , vol.78-79 , Issue.1-4 , pp. 229-232
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  • 8
    • 36449003198 scopus 로고    scopus 로고
    • A 10 μm GaAs/AlxGa1-xAs intersubband photodetector operating at zero bias voltage
    • DOI 10.1063/1.116116, PII S0003695196011072
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    • (1996) Applied Physics Letters , vol.68 , Issue.7 , pp. 973-975
    • Schonbein, C.1    Schneider, H.2    Bihlmann, G.3    Schwarz, K.4    Koidl, P.5
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.