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Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

Photocurrent spectra of heavily doped terahertz quantum well photodetectors

(5) Guo, X G a,b Zhang, R a,b Liu, H C b Springthorpe, A J b Cao, J C a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EFFICIENCY; BAND STRUCTURE CALCULATION; BLUE SHIFT; ESCAPE PROBABILITY; EXCITED ELECTRONS; FREE-SPACE COMMUNICATION; HEAVILY DOPED; PHOTOCURRENT SPECTRUM; QUANTUM WELL; QUANTUM WELL PHOTODETECTORS; SI-DOPING; SUB-BANDS; TERAHERTZ; TERAHERTZ QUANTUM WELLS; THZ DETECTORS; THZ IMAGING;

ABSORPTION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955133490 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3458829 Document Type: Article

Times cited : (14)

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