Low-noise amplifiers in D-band using 100 nm and 50 nm mHEMT technology

German Microwave Conference Digest of Papers, GeMIC 2010

Volumn , Issue , 2010, Pages 55-58

  Weissbrodt, E ^a   Kallfass, I ^a   Weber, R ^a   Tessmann, A ^a   Massler, H ^a   Leuther, A ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

D band; Low noise amplifier; mHEMT; Millimeter wave imaging; MMIC

Indexed keywords

CHIP SIZES; CIRCUIT DESIGNS; GATE LENGTH; GATE WIDTHS; IMPEDANCE MATCHING NETWORK; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER-WAVE IMAGING; NARROW BANDS; PASSIVE MILLIMETER WAVE IMAGING; SMALL SIGNAL GAIN;

COMPUTER SIMULATION; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE FIGURE; SCATTERING PARAMETERS;

AMPLIFIERS (ELECTRONIC);

EID: 77955114846     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. M. Kantanen, M. Kärkkäinen, M. Varonen, M. Laaninen, T Karttaavi, R. Weber et al., "Low Noise Amplifiers for D-band, Journal of the European Microwave Association 4, 2008, pp. 1-8.
8. M. Kantanen, M. Varonen, M. Kärkkäinen, T. Karttaavi, R. Weber, A. Leuther et al., "Coplanar 155 GHz MHEMT MMIC low noise amplifiers", Proceedings of Asia-Pacific Microwave Conference 2006, pp. 173-176.