Sensitive G-band raman features for the electrical conductivity of multi-walled carbon nanotubes

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 6, 2010, Pages 3940-3944

  Kim, Yoong Ahm ^a   Kakegawa, Hiroshi ^a   Fujisawa, Kazunori ^a   Shimamoto, Daisuke ^a   Muramatsu, Hiroyuki ^a   Kim, Jin Hee ^a   Jung, Yong Chae ^a   Hayashi, Takuya ^a   Endo, Morinobu ^a   Terrones, Mauricio ^b   Dresselhaus, Mildred S ^c  

^a SHINSHU UNIVERSITY   (Japan)

^b INSTITUTO POTOSINO DE INVESTIGACIÓN CIENTÍFICA Y TECNOLÓGICA   (Mexico)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carbon nanotubes; Electrical conductivity; Heat treatment; Raman spectroscopy

Indexed keywords

ACTIVE MATERIAL; ARGON ATMOSPHERES; CARBON ATOMS; CIRCUMFERENTIAL DIRECTION; CONDUCTIVE FILLERS; ELECTRICAL CONDUCTIVITY; HALF WIDTH AT HALF MAXIMUMS; HIGH ELECTRICAL CONDUCTIVITY; HIGH TEMPERATURE; INTERLAYER SPACINGS; LITHIUM IONS; LITHIUM-ION BATTERY; LONG TERM STABILITY; NANOCARBONS; R VALUE; RAMAN FEATURE; SENSITIVE PARAMETER; STRUCTURAL DEVELOPMENT; STRUCTURAL PARAMETER;

ARGON; CONDUCTIVE MATERIALS; ELECTRIC CONDUCTIVITY; HEAT TREATMENT; LITHIUM; LITHIUM ALLOYS; LITHIUM COMPOUNDS; MULTIWALLED CARBON NANOTUBES (MWCN); RAMAN SCATTERING; RAMAN SPECTROSCOPY;

CARBON NANOTUBES;

EID: 77955003546     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1992     Document Type: Article

References (26)

1. P. Eklund, P. Ajayan, R. Blackmon, J. Kong, J. Hart, B. Pradhan, A. Rao, and A. Rinzler, WTEC Panel Report on International Assessment of Carbon Nanotube Manufacturing and Applications, WETC, Baltimore (2006).
2. P. Nikolaev, M. J. Bronikowski, R. K. Bradley, F. Rohmund, D. T. Colbert, K. A. Smith, and R. E. Smalley, Chem. Phys. Lett. 313, 91 (1999).
3. Y. A. Kim, T. Hayashi, M. Endo, Y. Kaburagi, T. Tsukada, J. Shan, K. Osato, and S. Tsuruoka, Carbon 43, 2243 (2005).
4. M. Endo, Y. A. Kim, T. Hayashi, K. Nishimura, T. Matushita, K. Miyashita, and M. S. Dresselhaus, Carbon 39, 1287 (2001).
5. C. Sotowa, G. Origi, M. Takeuchi, Y. Nishimura, K. Takeuchi, I. Y. Jang, Y. J. Kim, T. Hayashi, Y. A. Kim, M. Endo, and M. S. Dresselhaus, ChemSusChem 1, 911 (2008).
6. M. Endo, M. S. Strano, and P. M. Ajayan, Carbon Nanotubes: Advanced Topics in the Synthesis, Structure, Properties and Applications, edited by A. Jorio, M. S. Dresselhaus, and G. Dresselhaus, Springer, New York (2008), pp. 13-61.
7. B. G. Demczyk, Y. M. Wang, J. Cumings, M. Hetmán, W. Han, A. Zettl, and R. O. Ritchie, Mater. Sci. Eng. A: Struct. Mater. Properties Microstruct. Process. 334, 173 (2002).
8. B. Q. Wei, R. Vajtai, and P. M. Ajayan, Appl. Phys. Lett. 79, 1172 (2001).
9. A. Oberlin, M. Endo, and T. Koyama, J. Cryst. Grow. 32, 335 (1976).
10. R. Andrew, D. Jacques, D. Qian, and E. C. Dickey, Carbon 39, 1681 (2001).
11. Y. A. Kim, T. Hayashi, K. Osawa, M. S. Dresselhaus, and M. Endo, Chem. Phys. Lett. 380, 319 (2003).
12. J. Chen, J. Y. Shan, T. Tsukada, F. Munekane, A. Kuno, M. Matsuo, T. Hayashi, Y. A. Kim, and M. Endo, Carbon 45, 274 (2007).
13. J. S. II, S. H. Jo, H. S. Moon, J. M. Kim, D. S. Zang, and C. J. Lee, J. Phys. Chem. C 111, 4175 (2007).
14. W. Ruland, Chemistry and Physics of Carbon, edited by P. L. Walker, Dekker, New York (1968), Vol. 4, pp. 125-190.
15. F. Tuinstra and J. L. Koenig, J. Chem. Phys. 53, 1126 (1970).
16. L. G. Caneado, K. Takai, T. Enoki, M. Endo, Y. A. Kim, H. Mizusaki, A. Jorio, L. N. Coelho, R. Magalhaes-Paniago, and M. A. Pimenta, Appl. Phys. Lett. 88, 163106 (2006).
17. M. Endo, Chem. Tech. 568 (1988).
18. R. Kamalakaran, M. Terrones, T. Seeger, Ph. Kohler-Redlich, M. Ruhle, Y. A. Kim, T. Hayashi, and M. Endo, Appl. Phys. Lett. 77, 3385 (2000).
19. A. Espinóla, P. M. Miguel, M. R. Salles, and A. R. Pinto, Carbon 24, 337 (1986).
20. B. T. Kelly, Physics of Graphite, Springer, New York (1981).
21. P. G. Collins, M. Hersam, M. Arnold, R. Martel, and Ph. Avouris, Phys. Rev. Lett. 86, 3128 (2001).
22. A. P. Graham, G. S. Duesberg, R. V. Seidel, M. Liebau, E. Unger, W Pamler, F. Kreupl, and W. Hoenlein, Small 1, 382 (2005).
23. E. Pop, D. Mann, J. Reifenberg, K. Goodson, and H. Dai, IEEE Intl. Electron Devices Meeting (IEDM), Washington, DC, December (2005).
24. B. Q. Wei, R. Vajtai, and P. M. Ajayan, Appl. Phys. Lett. 79, 1172 (2001).
25. M. S. Dresselhaus, G. Dresselhaus, R. Saito, and A. Jorio, Phys. Rep. 409, 47 (2005).
26. S. Megahed and B. Scrosati, J. Power Sources 51, 79 (1994).