Electronic structure and linear optical properties of ZnSe and ZnSe:Mn

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 3, 2010, Pages 1857-1859

  Su, Kang ^a   Wang, Yuhua ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Densities of states; Energy band structures; ZnSe:Mn

Indexed keywords

BAND GAPS; BLUE LIGHT-EMITTING; DENSITIES OF STATE; DIODE LASERS; ELECTRON STATE; ENERGY BAND STRUCTURE; EXPERIMENTAL VALUES; II-VI SEMICONDUCTOR; LINEAR OPTICAL PROPERTIES; MN-DOPED; PARTIAL DENSITIES; PHOTO-ELECTRONIC DEVICES; PSEUDOPOTENTIALS; QUANTUM DOT MATERIALS; S STATE; VIENNA AB-INITIO SIMULATION PACKAGES; WIDE BAND GAP;

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EQUILIBRIUM CONSTANTS; LATTICE CONSTANTS; LIGHT EMITTING DIODES; MANGANESE COMPOUNDS; REFRACTIVE INDEX; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; ZINC; ZINC SULFIDE;

MANGANESE;

EID: 77954990851     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2123     Document Type: Article

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