Doping of carbon nanotubes using low energy ion implantation

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 6, 2010, Pages 3934-3939

  Jang, Jin Ho ^a   Lim, Seong Chu ^a   Duong, Dihn Loc ^a   Kim, Gunn ^a   Yu, Woo Jong ^b   Han, Kang Hee ^a   Min, Yo Sep ^c,d   Lee, Young Hee ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Konkuk University   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

Carbon nanotubes; Doping; Ion implantation; Nitrogen; Oxygen

Indexed keywords

ACCELERATION VOLTAGES; CARBON NANOTUBES DOPING; DOPING; ELECTRON-DOPING; LOW DOSE; LOW ENERGY ION IMPLANTATION; METALLIC BEHAVIORS; NITROGEN IMPURITY; NITROGEN-DOPED; NITROGEN-DOPING; OXYGEN IONS; P-TYPE BEHAVIORS; SOURCE-DRAIN CURRENT; THEORETICAL RESULT;

DOPING (ADDITIVES); ELECTRON MOBILITY; ION IMPLANTATION; NITROGEN; OXYGEN;

CARBON NANOTUBES;

EID: 77954965830     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1989     Document Type: Article

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