Synthesis and formaldehyde sensing properties of pd-doped Sn02 nanoparticles

Sensor Letters

Volumn 8, Issue 2, 2010, Pages 238-242

  Chen, Ting ^a   Mu, Qiuying ^a   Zhou, Zhenlai ^a   Wang, Yude ^a  

^a YUNNAN UNIVERSITY   (China)

Author keywords

Formaldehyde; Gas response; Gas sensors; Nanoparticles; Pd doped SnO2

Indexed keywords

FORMALDEHYDE-SENSING; GAS RESPONSE; GAS SENSING; GAS SENSING CHARACTERISTICS; GAS SENSITIVITY; GAS SENSORS; QUICK RESPONSE TIME; RESULTING MATERIALS; SEM; SENSITIVE MATERIALS; SENSITIVE MECHANISM; SURFACTANT-ASSISTED METHOD; TRANSMISSION ELECTRON MICROGRAPH;

FORMALDEHYDE; GAS DETECTORS; GASES; NANOPARTICLES; SCANNING ELECTRON MICROSCOPY; SENSORS; SURFACE ACTIVE AGENTS; X RAY DIFFRACTION;

PALLADIUM;

EID: 77954934344     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2010.1254     Document Type: Article

References (22)

1. D. S. Lee, Y. T. Kim, J. S. Huh, and D. D. Lee, Thin Solid Films 416, 271 (2002).
2. O. Kersen and L. Holappa, Anal. Chim. Acta 562, 110 (2006).
3. J. Kaur, S. C. Roy, and M. C. Bhatnagar, Sens. Actuators B 123, 1090 (2007).
4. T. D. Senguttuvan, R. Rai, and S. T. Lakshmikumar, Mater. Lett. 61, 582 (2007).
5. M. A. Aronova, K. S. Chang, I. Takeuchi, H. Jabs, D. Westerheim, A. Gonzalez-Martin, J. Kim, and B. Lewis, Appl. Phys. Lett. 83, 1255 (2003).
6. A. Diéguez, A. Romano-Rodrńguez, J. R. Morante, J. Kappler, N. Bârsan, and W. Göpel, Sens. Actuators B 60, 125 (1999).
7. Y. D. Wang, X. H. Wu, Y. F. Li, and Z. L. Zhou, Solid-State Electron. 48, 627 (2004).
8. P. J. Shaver, Appl. Phys. Lett. 11, 255 (1967).
9. J. C. Loh, Japan Patent 43-28560 (1967).
10. L. Feng, Y. J. Liu, X. D. Zhou, and J. M. Hu, J. Colloid Interface Sei. 284, 378 (2005).
11. Y. Herschkovitz, I. Eshkenazi, C. E. Campbell, and J. Rishpon, J. Electroanal. Chem. 491, 182 (2000).
12. L. Daza, S. Dassy, and B. Delmon, Sens. Actuators B 10, 99 (1993).
13. J. A. Dirksen, K. Duval, and T. A. Ring, Sens. Actuators B 80, 106 (2001).
14. C. Y. Lee, C. M. Chiang, Y. H. Wang, and R. H. Ma, Sens. Actuators B 122, 503 (2007).
15. L. Zhang, J. F. Hu, P. Song, H. W. Qin, X. D. Liu, and M. H. Jiang, Physica B 370, 259 (2005).
16. T. Chen, Q. J. Liu, Z. L. Zhou, and Y. D. Wang, Nanotechnology 19, 095506 (2008).
17. Y. D. Wang, C. L. Ma, X. D. Sun, and H. D. Li, Nanotechnology 13, 565(2002).
18. Y. D. Wang, C. L. Ma, X. H. Wu, X. D. Sun, and H. D. Li, Talanta 57, 875 (2002).
19. T. Wolkenstein, Electronic Processes on Semiconductor Surfaces During Chemisorption, Consultants Bureau, New York (1991).
20. I. E. Wachs and R. J. Madix, Surf. Sei. 84, 375 (1979).
21. I. E. Wachs and R. J. Madix, Surf. Sei. 5, 426 (1980).
22. Y. Sekine, Atmos. Environ. 36, 5543 (2002).