Response properties of waveguide-optic evanescent field refractive index sensors according to titanium dioxide thin film conditions

Sensor Letters

Volumn 8, Issue 3, 2010, Pages 431-435

  Kwon, S W ^a   Yang, W S ^b   Lee, H M ^b   Kim, W K ^b   Lee, H Y ^b   Son, G S ^c   Jeong, W J ^d   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

^c Kwangwoon University   (South Korea)

^d University of Seoul   (South Korea)

Author keywords

Evanescent field; Polarimetric interference pattern; Refractive index sensor; Silica waveguide; Titanium dioxide

Indexed keywords

EVANESCENT FIELDS; FABRICATED DEVICE; HIGH-SENSITIVITY; INTERFERENCE PATTERNS; REFRACTIVE INDEX SENSOR; RESPONSE PROPERTIES; SILICA WAVEGUIDE; SPUTTERING DEPOSITION; THIN-FILM DEPOSITIONS; TIO; TITANIUM DIOXIDE THIN FILM;

GLYCEROL; LIGHT REFRACTION; PHOTOLITHOGRAPHY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMA FILLED WAVEGUIDES; POLARIMETERS; POLAROGRAPHIC ANALYSIS; REFRACTIVE INDEX; REFRACTOMETERS; SENSORS; SILICA; THIN FILMS; TITANIUM; TITANIUM DIOXIDE; VAPOR DEPOSITION;

DEPOSITION;

EID: 77954916079     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/Sl.2010.1290     Document Type: Conference Paper

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