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Volumn 81, Issue 1, 2010, Pages

First-principles study of uranium carbide: Accommodation of point defects and of helium, xenon, and oxygen impurities

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EID: 77954776888     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.014101     Document Type: Article
Times cited : (79)

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