Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions

Organic Electronics

Volumn 11, Issue 9, 2010, Pages 1507-1510

  Lyashenko, Dmitry A ^a,b   Zakhidov, Alexander A ^b   Pozdin, Vladimir A ^b   Malliaras, George G ^b  

^a UNIVERSITY OF EASTERN FINLAND   (Finland)

^b Cornell University   (United States)

Author keywords

Organic electronics; Organic thin film transistors

Indexed keywords

ALUMINA; ALUMINUM OXIDE; FABRICATION; GOLD DEPOSITS; HOLE MOBILITY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; X RAY SCATTERING;

ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTOR (OTFTS); ORGANIC THIN FILM TRANSISTORS; POLY (3-HEXYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE) TRANSISTORS; POST DEPOSITION ANNEALING; SOURCE AND DRAIN ELECTRODES; SYNCHROTRON X-RAY SCATTERING;

THIN FILM TRANSISTORS;

EID: 77954764927     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.05.016     Document Type: Article

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