SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2010, Pages 569-572

  Krishnamurthy, V ^a   Hershberger, K ^a   Eplett, B ^a   Dekosky, J ^a   Zhao, H ^a   Poulin, D ^a   Rood, R ^a   Prince, E ^a  

^a VT Silicon Inc   (United States)

Author keywords

4G.; LTE; PA; Power amplifier; SiGe; WIMAX

Indexed keywords

4G.; FRONT END; KEY ELEMENTS; LTE; SECOND HARMONICS; SIGE POWER AMPLIFIERS; SPECTRAL MASKS; WIDE-BAND;

DIGITAL INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; INTEROPERABILITY; POWER AMPLIFIERS; RADIO; RADIO WAVES; SPECIFICATIONS; WIMAX;

SILICON ALLOYS;

EID: 77954467370     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2010.5477364     Document Type: Conference Paper

References (6)

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2. Yan Li, Lopez, J., Lie D.Y.C., Chen K., Wu, S., Tzu-Yi Yang," SiGe Class-E Power Amplifier With Envelope Tracking For Mobile WIMAX/WiBro Applications," IEEE International Symposium on Circuits and Systems, pp. 2017-2020, May 2009.
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5. Arvind Keerti, Anh-Vu H. Pham, "RF Characterization of SiGe HBT Power Amplifiers Under Load Mismatch," IEEE Trans. Microw. Theory and Tech., vol. 55, no.2, pp. 207-214, February 2007
6. th, 2009