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Volumn 100, Issue PART 7, 2008, Pages
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Atomic displacements and electronic properties for 4×1-8×2 phase transition of In-adsorbed Si(111) surface
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Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
CHARGE DENSITY;
CHARGE DENSITY WAVES;
ELECTRONIC PROPERTIES;
INTELLIGENT SYSTEMS;
ISING MODEL;
METAL INSULATOR BOUNDARIES;
MONTE CARLO METHODS;
ORDER DISORDER TRANSITIONS;
SEMICONDUCTOR INSULATOR BOUNDARIES;
NANOSCIENCE;
ATOMIC DISPLACEMENT;
FIRST-PRINCIPLES CALCULATION;
PEIERLS TRANSITION;
RECONSTRUCTED SURFACES;
STRUCTURAL TRANSITIONS;
SURFACE ELECTRONIC PROPERTIES;
SURFACE ELECTRONIC STATE;
TIGHT BINDING MODEL;
METAL INSULATOR TRANSITION;
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EID: 77954332222
PISSN: 17426588
EISSN: 17426596
Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/100/7/072039 Document Type: Conference Paper |
Times cited : (1)
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References (11)
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