메뉴 건너뛰기




Volumn 100, Issue PART 7, 2008, Pages

Atomic displacements and electronic properties for 4×1-8×2 phase transition of In-adsorbed Si(111) surface

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE DENSITY; CHARGE DENSITY WAVES; ELECTRONIC PROPERTIES; INTELLIGENT SYSTEMS; ISING MODEL; METAL INSULATOR BOUNDARIES; MONTE CARLO METHODS; ORDER DISORDER TRANSITIONS; SEMICONDUCTOR INSULATOR BOUNDARIES; NANOSCIENCE;

EID: 77954332222     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/7/072039     Document Type: Conference Paper
Times cited : (1)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.