SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 1109, Issue , 2009, Pages 126-131

Effect of thermal annealing on deep and near-band edge emission from ZnO films grown by plasma-assisted MBE

(6) Avrutin, V a Reshchikov, M A b Izyumskaya, N a Shimada, R a Novak, S W c Morkoc H a,b

a Virginia Commonwealth University (United States)

b VIRGINIA COMMONWEALTH UNIVERSITY (United States)

c EVANS ANALYTICAL GROUP (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; EXCITON BOUND; EXPONENTIAL DEPENDENCE; FINE STRUCTURES; GREEN LUMINESCENCE; LINEAR DEPENDENCE; NEAR BAND EDGE EMISSIONS; OUT-DIFFUSION; PLASMA-ASSISTED MBE; SIMS PROFILE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL-ANNEALING; ZNO FILMS; ZNO LAYERS;

ACTIVATION ENERGY; SECONDARY ION MASS SPECTROMETRY; ZINC; ZINC OXIDE;

ANNEALING;

EID: 77954308499 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

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