Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reduction

IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Volumn , Issue , 2010, Pages 86-89

  Koh, Shao Ming ^a   Ng, Chee Mang ^b   Liu, Pan ^b   Mo, Zhi Qiang ^b   Wang, Xincai ^c   Zheng, Hongyu ^c   Zhao, Zhi Yong ^d   Variam, Naushad ^d   Henry, Todd ^d   Erokhin, Yuri ^d   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; CONTACT FORMATION; CONTACT TECHNOLOGIES; FUTURE TECHNOLOGIES; IMPLANT ENERGY; LOW ENERGIES; NEW OPTIONS; NICKEL SILICIDE; PULSED LASER; SCHOTTKY BARRIER HEIGHT MODULATION; SCHOTTKY BARRIER HEIGHTS; THERMAL BUDGET;

ALUMINUM; ION IMPLANTATION; PULSED LASER APPLICATIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; TECHNOLOGY;

PULSED LASERS;

EID: 77954270278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2010.5474983     Document Type: Conference Paper

References (12)

1. A. M. Noori et al., IEEE Trans. on Elect. Dev., 55, no.5, 1259, 2008.
2. S.-D. Kim et al., IEEE Trans. on Elect. Dev., 55, no.3, 2002.
3. M. Sinha et al., Appl. Phys. Lett., 92, 222114, pp. 92, 2008.
4. M. Sinha et al., Int. Symp. on VLSL-TSA, pp. 74, 2009.
5. M. Sinha et al., Symp. on VLSI Tech., pp. 106, 2009.
6. M. Sinha et al., J. Electrochemical Society, 156, no.4, pp. H233, 2009.
7. ITRS 2008 Update, Semiconductor Industry Association, 2008.
8. th IEEE Int. Conf. on Adv. Thermal Processing of Semi., RTP 2008, pp. 57, 2008.
9. Y. Setiawan et al., J. of Appl. Phys., 101, 034307, 2007.
10. T. Yamauchi et al., IEDM Tech. Dig., pp. 963, 2007.
11. S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., Hoboken, NJ, Wiley, 1981.
12. J. M. Shannon, Appl. Phys. Lett., 24, 369, 1974.