Epitaxial growth of asymmetric α-silicon nitride nanocombs

Materials Research Bulletin

Volumn 45, Issue 7, 2010, Pages 888-891

  Wang, Qiushi ^a   Cui, Qiliang ^a   Zhu, Pinwen ^a   Jin, Yinxia ^a   Hao, Jian ^a   Zhang, Jian ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

Epitaxial growth; Nitrides; Optical properties; Scanning tunneling microscopy

Indexed keywords

ARC-DISCHARGE METHOD; BLUE LIGHT EMISSIONS; DIRECT CURRENT; EPITAXIAL NUCLEATION; GROWTH MECHANISMS; NANOCOMBS; PHOTOLUMINESCENCE SPECTRUM;

EPITAXIAL GROWTH; NANORODS; OPTICAL PROPERTIES; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON NITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954216615     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2010.03.026     Document Type: Article

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