Thermoelectric properties of binary semiconducting intermetallic compounds Al2Ru and Ga2Ru synthesized by spark plasma sintering process

Materials Transactions

Volumn 51, Issue 5, 2010, Pages 988-993

  Takagiwa, Yoshiki ^a   Matsubayashi, Yuka ^a   Suzumura, Akitoshi ^a   Okada, Junpei Tamura ^b   Kimura, Kaoru ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Narrow band gap semiconductor; Ruthenium aluminide; Ruthenium gallide; Spark plasma sintering; Thermoelectric material

Indexed keywords

ALUMINIDES; FIGURES OF MERITS; LARGE POWER; MAXIMUM VALUES; NARROW BANDS; NARROW-BAND-GAP SEMICONDUCTOR; POSITIVE VALUE; SECONDARY PHASE; SINTERED PELLETS; SPARK PLASMA SINTERING METHOD; SPARK PLASMA SINTERING PROCESS; THERMAL TRANSPORT PROPERTIES; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES;

ELECTRIC POWER FACTOR; ELECTRIC PROPERTIES; ELECTRIC SPARKS; PELLETIZING; PLASMAS; RUTHENIUM; RUTHENIUM ALLOYS; SEMICONDUCTING INTERMETALLICS; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; TRANSPORT PROPERTIES;

ALUMINUM;

EID: 77953994336     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.E-M2010807     Document Type: Conference Paper

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