High temperature oxidation of SiC under helium with low-pressure oxygen-Part 1: Sintered α-SiC

Journal of the European Ceramic Society

Volumn 30, Issue 12, 2010, Pages 2653-2660

  Charpentier, L ^a,b   Balat Pichelin, M ^a   Audubert, F ^b  

^a Centre National de la Recherche Scientifique   (France)

^b IRFM   (France)

Author keywords

Corrosion; High temperature; Nuclear applications; SiC; Surfaces

Indexed keywords

ACTIVE OXIDATION REGIMES; CLADDING MATERIAL; ENVIRONMENTAL CONSTRAINTS; EXPERIMENTAL TEST; GAS-COOLED FAST REACTORS; GENERATION IV; HIGH TEMPERATURE; HIGH TEMPERATURE OXIDATION; MASS LOSS RATE; MASS VARIATIONS; NUCLEAR APPLICATION; NUCLEAR APPLICATIONS; OXYGEN PARTIAL PRESSURE; PHYSICO-CHEMICALS; REACTOR TEMPERATURES; REFRACTORY CARBIDES; ROUGHNESS ANALYSIS; SEM; SIC; WORKING TEMPERATURES;

CORROSION; FAST REACTORS; GAS COOLED REACTORS; HELIUM; HIGH TEMPERATURE APPLICATIONS; NUCLEAR REACTOR ACCIDENTS; OXIDATION; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; SINTERING;

SILICON CARBIDE;

EID: 77953961270     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2010.04.025     Document Type: Article

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