Scintillation properties of in doped ZnO with different in concentrations

IEEE Transactions on Nuclear Science

Volumn 57, Issue 3 PART 2, 2010, Pages 1325-1328

  Yanagida, Takayuki ^a   Fujimoto, Yutaka ^a   Yoshikawa, Akira ^a   Yokota, Yuui ^a   Miyamoto, Miyuki ^b   Sekiwa, Hideyuki ^b   Kobayashi, Jun ^b   Tokutake, Taichi ^b   Kamada, Kei ^a   Maeo, Shuji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b MITSUBISHI GAS CHEMICAL COMPANY INC   (Japan)

Author keywords

Gamma ray detectors; Indium; Radiation detectors; Scintillation detectors

Indexed keywords

BGO-SCINTILLATORS; DOPED ZNO; EMISSION BANDS; GAMMA RAY DETECTOR; GAMMA-RAY DETECTORS; HIGH-CRYSTALLINE QUALITY; INDIUM CONCENTRATION; LIGHT YIELD; LUMINESCENCE SPECTRUM; RADIATION RESPONSE; SCINTILLATION DECAY; SCINTILLATION DETECTORS; SCINTILLATION PROPERTIES; SILICONE GREASE;

CRYSTAL GROWTH; GAMMA RAYS; INDIUM; LIGHT; LUMINESCENCE; NEUTRON DETECTORS; OPTICAL PROPERTIES; SCINTILLATION; SCINTILLATION COUNTERS; SILICONES; ZINC OXIDE;

RADIATION DETECTORS;

EID: 77953954697     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2035120     Document Type: Conference Paper

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