Colloidal ZnO quantum dot-based, solution-processed transparent field-effect transistors

Journal of Physics D: Applied Physics

Volumn 43, Issue 27, 2010, Pages

  Ahn, Joo Seob ^a   Lee, Jong Jin ^a   Hyung, Gun Woo ^a   Kim, Young Kwan ^a   Yang, Heesun ^a  

^a Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CRACK FREE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; GA-DOPED ZNO; ORGANIC MOLECULES; QD-BASED DEVICES; QUANTUM DOT; SN DOPING; SN-DOPED; SOLUTION-PROCESSED; SOURCE-DRAIN; TRANSPARENT ELECTRODE; ZNO; ZNO QUANTUM DOTS;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS; TIN; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 77953910062     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/27/275102     Document Type: Article

References (29)

1. Li C S, Li Y N, Wu Y L, Ong B S and Loutfy R O 2007 J. Appl. Phys. 102 076101
2. Ong B S, Li C S, Li Y N, Wu Y L and Loutfy R O 2007 J. Am. Chem. Soc. 129 2750
3. Cheng H C, Chen C F and Tsay C Y 2007 Appl. Phys. Lett. 90 012113
4. Jeong S, Jeong Y and Moon J 2008 J. Phys. Chem. C 112 11082
5. Faber H, Burkhardt M, Jedaa A, Kalblein D, Klauk H and Halik M 2009 Adv. Mater. 21 3099
6. Pal B N, Trottman P, Sun J and Katz H E 2008 Adv. Funct. Mater. 18 1832
7. Sun B Q, Peterson R L, Sirringhaus H and Mori K 2007 J. Phys. Chem. C 111 18831
8. Li C S, Li Y N, Wu Y L, Ong B S and Loutfy R O 2008 J. Phys. D: Appl. Phys. 41 125102
9. Sun B Q and Sirringhaus H 2006 J. Am. Chem. Soc. 128 16231-37
10. Lee S, Jeong S, Kim D, Park B K and Moon J 2007 Superlatt. Microstruct. 42 361
11. Cheng H C, Chen C F and Lee C C 2006 Thin Solid Films 498 142
12. Sun B and Sirringhaus H 2005 Nano Lett. 5 2408
13. Ju S Y, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P D, Zhou C W, Marks T J and Janes D B 2007 Nature Nanotechnol. 2 378
14. Lee D H, Chang Y J, Herman G S and Chang C H 2007 Adv. Mater. 19 843
15. Chang Y J, Lee D H, Herman G S and Chang C H 2007 Electrochem. Solid-State Lett. 10 H135
16. Park W J, Shin H S, Ahn B Du, Kim G H, Lee S M, Kim K H and Kim H J 2008 Appl. Phys. Lett. 93 083508
17. Suresh A, Novak S, Wellenius P, Misra V and Muth J F 2009 Appl. Phys. Lett. 94 123501
18. Park S K, Kim Y H and Han J I 2009 J. Phys. D: Appl. Phys. 42 125102
19. Li Q H, Wan Q, Liang Y X and Wang T H 2004 Appl. Phys. Lett. 84 4556
20. Goldberger J, Sirbuly D J, Law M and Yang P 2005 J. Phys. Chem. B 109 9
21. Li Q H, Liang Y X, Wan Q and Wang T H 2004 Appl. Phys. Lett. 85 6389
22. Hoffman R L 2004 J. Appl. Phys. 95 5813
23. Carcia P F, McLean R S, Reilly M H and Nunes G 2003 Appl. Phys. Lett. 82 1117
24. Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H and Kawai T 2003 J. Appl. Phys. 93 1624
25. Norris B J, Anderson J, Wager J F and Keszler D 2003 J. Phys. D: Appl. Phys. 36 L105
26. Lee S, Jeong Y, Jeong S, Lee J, Jeon M and Moon J 2008 Superlatt. Microstruct. 44 761
27. Li Y, Meng G W, Zhang L D and Phillipp F 2000 Appl. Phys. Lett. 76 2011
28. Tseng Y K, Huang C J, Cheng H M, Lin I N, Liu K S and Chen I C 2003 Adv. Funct. Mater. 13 811
29. Seo S J, Choi C G, Hwang Y H and Bae B S 2009 J. Phys. D: Appl. Phys. 42 035106