Synthesis, crystal and electronic structures of new narrow-band-gap semiconducting antimonide oxides RE3SbO3 and RE 8Sb3-δO8, with RE = La, Sm, Gd, and Ho

Journal of the American Chemical Society

Volumn 132, Issue 25, 2010, Pages 8795-8803

  Wang, Peng ^a   Forbes, Scott ^a   Kolodiazhnyi, Taras ^b   Kosuda, Kosuke ^b   Mozharivskyj, Yurij ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSON LOCALIZATION; ANTIMONIDES; BAND GAPS; ELECTRICAL BEHAVIORS; ELECTRICAL RESISTIVITY; ELECTRICAL RESISTIVITY MEASUREMENTS; ELECTRONIC STRUCTURE CALCULATIONS; HIGH TEMPERATURE; HIGH-PURITY; MONOCLINIC STRUCTURES; NARROW BANDS; SEMICONDUCTOR-TYPE; SPACE GROUPS; SUB-LATTICES; THERMOELECTRIC MATERIAL;

CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GADOLINIUM; HOLMIUM; THERMOELECTRICITY;

LANTHANUM;

OXIDE;

ARTICLE; CHEMICAL COMPOSITION; CHEMICAL STRUCTURE; ELECTRIC RESISTANCE; SEMICONDUCTOR; SYNTHESIS; TEMPERATURE SENSITIVITY; THERMOSTABILITY; X RAY CRYSTALLOGRAPHY;

EID: 77953904757     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja1027698     Document Type: Article

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