Unusual metallic-like transport near the percolation threshold

Applied Physics Letters

Volumn 96, Issue 24, 2010, Pages

  Bhatia, Ravi ^a   Suchand Sangeeth, C S ^a   Prasad, V ^a   Menon, Reghu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY DEPENDENCE; LOW FIELD; MAGNETOCONDUCTANCE; METALLIC SYSTEMS; MULTI-WALL CARBON NANOTUBES; PERCOLATION THRESHOLDS; POWER LAW; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; WEAK LOCALIZATION;

CARBON NANOTUBES; METALLIC COMPOUNDS; MULTIWALLED CARBON NANOTUBES (MWCN); PERCOLATION (COMPUTER STORAGE); PERCOLATION (SOLID STATE); POLYSTYRENES; SOLVENTS;

PERCOLATION (FLUIDS);

EID: 77953737338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3455895     Document Type: Article

References (18)

1. H. M. Kim, M. -S. Choi, J. Joo, S. J. Cho, and H. S. Yoon, Phys. Rev. B PRBMDO 0163-1829 74, 054202 (2006). 10.1103/PhysRevB.74.054202 (Pubitemid 44168882)
2. J. M. Benoit, B. Corraze, and O. Chauvet, Phys. Rev. B PRBMDO 0163-1829 65, 241405 (2002). 10.1103/PhysRevB.65.241405
3. P. Sheng, E. K. Sichel, and J. I. Gittleman, Phys. Rev. Lett. PRLTAO 0031-9007 40, 1197 (1978). 10.1103/PhysRevLett.40.1197
4. V. Augelli, T. Lignozo, M. C. Masellis, M. F. Mascarella, L. Schiavulli, and A. Valentini, J. Appl. Phys. JAPIAU 0021-8979 90, 1362 (2001). 10.1063/1.1383981
5. M. Reghu, C. O. Yoon, C. Y. Yang, D. Moses, P. Smith, A. J. Heeger, and Y. Cao, Phys. Rev. B PRBMDO 0163-1829 50, 13931 (1994). 10.1103/PhysRevB.50. 13931
6. R. Ramasubramaniam, J. Chen, and H. Liu, Appl. Phys. Lett. APPLAB 0003-6951 83, 2928 (2003). 10.1063/1.1616976
7. E. Kymakis and G. A. J. Amaratunga, J. Appl. Phys. JAPIAU 0021-8979 99, 084302 (2006). 10.1063/1.2189931
8. M. P. Anantram, and F. L'eonard, Rep. Prog. Phys. RPPHAG 0034-4885 69, 507 (2006). 10.1088/0034-4885/69/3/R01 (Pubitemid 43306354)
9. R. Bhatia and V. Prasad, Solid State Commun. SSCOA4 0038-1098 150, 311 (2010). 10.1016/j.ssc.2009.11.023
10. A. G. Zabrodskii and K. N. Zinov'eva, Sov. Phys. JETP SPHJAR 0038-5646 59, 345 (1984).
11. A. I. Larkin and D. E. Khmelnitskii, Sov. Phys. JETP SPHJAR 0038-5646 56, 647 (1982).
12. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1979).
13. P. K. Choudhury, M. Jaiswal, and R. Menon, Phys. Rev. B PRBMDO 0163-1829 76, 235432 (2007). 10.1103/PhysRevB.76.235432
14. J. Vavro, J. M. Kikkawa, and J. E. Fischer, Phys. Rev. B PRBMDO 0163-1829 71, 155410 (2005). 10.1103/PhysRevB.71.155410 (Pubitemid 41749547)
15. A. R. Long, Adv. Phys. ADPHAH 0001-8732 31, 553 (1982). 10.1080/00018738200101418
16. S. R. Elliott, Adv. Phys. ADPHAH 0001-8732 36, 135 (1987). 10.1080/00018738700101971
17. B. E. Kilbride, J. N. Coleman, J. Fraysse, P. Fournet, M. Cadek, A. Drury, S. Hutzler, S. Roth, and W. J. Blau, J. Appl. Phys. JAPIAU 0021-8979 92, 4024 (2002). 10.1063/1.1506397 (Pubitemid 35209192)
18. C. S. Suchand Sangeeth, M. Jaiswal, and R. Menon, J. Phys.: Condens. Matter JCOMEL 0953-8984 21, 072101 (2009). 10.1088/0953-8984/21/7/072101