SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 3, 2010, Pages 406-411

Wall-to-wall stress induced in (6,5) semiconducting nanotubes by encapsulation in metallic outer tubes of different diameters: A resonance Raman study of individual C60-derived double-wall carbon nanotubes

(7) Villalpando Paez, Federico a Muramatsu, Hiroyuki b Kim, Yoong Ahm b Farhat, Hootan a Endo, Morinobu b Terrones, Mauricio c Dresselhaus, Mildred S d

a Massachusetts Institute of Technology (United States)

b SHINSHU UNIVERSITY (Japan)

c INSTITUTO POTOSINO DE INVESTIGACIÓN CIENTÍFICA Y TECNOLÓGICA (Mexico)

d Department of Electrical Engineering and Computer Science (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND MODES; DOUBLE-WALL CARBON NANOTUBES; FREQUENCY SPLITTINGS; INNER TUBES; LASER ENERGIES; METALLIC TUBES; RADIAL BREATHING MODE; RAMAN SPECTRA; RESONANCE RAMAN; RESONANT RAMAN SCATTERING; SECOND ORDERS; SEMI-CONDUCTING NANOTUBES; SEMICONDUCTING TUBES; WALL DISTANCES; WALL STRESS;

CARBON NANOTUBES; MULTIWALLED CARBON NANOTUBES (MWCN); RAMAN SCATTERING; RAMAN SPECTROSCOPY; RESONANCE;

TUBES (COMPONENTS);

CARBON NANOTUBE; FULLERENE C60; FULLERENE DERIVATIVE;

ARTICLE; CHEMISTRY; PARTICLE SIZE; RAMAN SPECTROMETRY; SEMICONDUCTOR;

FULLERENES; NANOTUBES, CARBON; PARTICLE SIZE; SEMICONDUCTORS; SPECTRUM ANALYSIS, RAMAN;

EID: 77953669828 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/b9nr00268e Document Type: Article

Times cited : (28)

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