Plasmon-resonant microchip emitters and detectors for terahertz sensing and spectroscopic applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7671, Issue , 2010, Pages

  Otsuji, Taiichi ^a   Komori, Tsuneyoshi ^a   Watanabe, Takayuki ^a   Suemitsu, Tetsuya ^a   Coquillat, Dominique ^b   Knap, Wojciech ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

detector; emitter; Plasmon; sensing; spectroscopy; terahertz

Indexed keywords

EMITTER; EMITTERS AND DETECTORS; MAPLE SYRUP; SEMICONDUCTOR HETEROSTRUCTURES; SENSING; SENSITIVITY CHARACTERISTICS; SPECTROSCOPIC APPLICATION; TERA HERTZ; TERAHERTZ RADIATION; TERAHERTZ SENSING; THZ DETECTORS; WATER-VAPOR ABSORPTION;

DETECTORS; LIGHT SOURCES; OPTICAL DATA STORAGE; PLASMONS; SUGAR (SUCROSE); TERAHERTZ WAVES; WATER ABSORPTION; WATER VAPOR; WAVELET TRANSFORMS;

TERAHERTZ SPECTROSCOPY;

EID: 77953635010     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850009     Document Type: Conference Paper

References (49)

1. M. Tonouchi, "Cutting-edge terahertz technology," Nature Photon. 1, 97-105 (2007).
2. M. Dyakonov and M. Shur, "Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current," Phys. Rev. Lett. 71, 2465-2468 (1993).
3. M. Dyakonov and M. Shur, " Plasma wave electronics: novel terahertz devices using two dimensional electron fluid," IEEE Trans. Electron Devices 43, 1640-1645 (1996).
4. R. A. Hopfel, E. Vass, and E. Gornik, "Thermal Excitation of Two-Dimensional Plasma Oscillations," Phys. Rev. Lett. 49, 1667-1671 (1982).
5. D. C. Tsui, E. Gornik and R. A. Logan, "Far infrared emission from plasma oscillations of Si inversion layers," Solid State Comm. 35, 875-877 (1980).
6. N. Okisu, Y. Sambe, and T. Kobayashi, "Far-infrared emission from two-dimensional plasmons in AlGaAs/GaAs heterointerfaces," Appl. Phys. Lett. 48, 776 (1986).
7. R. Hopfel, G. Lindemann, E. Gornik, G. Stangl, A. C. Gossard and W. Wiegmann, "Cyclotron and plasmon emission from two-dimensional electrons in GaAs," Surf. Sci. 113, 118-123 (1982).
8. R.J. Wilkinson, C.D. Ager, T. Duffield, H.P. Hughes, D.G. Hasko, H. Armed, J.E.F. Frost, D.C. Peacock, D.A. Ritchie, A.C. Jones, C.R. Whitehouse, and N. Apsley, "Plasmon excitation and self-coupling in a bi-periodically modulated two-dimensional electron gas," J. Appl. Phys. 71, 6049-6061(1992).
9. 0.7As/GaAs heterojunctions," Appl. Phys. Lett. 67, 2326 (1995).
10. W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, "Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors," Appl. Phys. Lett. 84, 2331 (2004).
11. J. Lusakowski, W. Knap, N. Dyakonova, and L. Varani, "Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor," J. Appl. Phys. 97, 064307 (2005).
12. N. Dyakonova, F. Teppe, J. Lusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, "Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors," J. Appl. Phys. 97, 114313 (2005).
13. S.A. Mikhailov, "Plasma instability and amplification of electromagnetic waves in low-dimensional electron systems," Phys. Rev. B. 58, 1517-1532 (1998).
14. P. Bakshi, K. Kempa, A. Scorupsky, C. G. Du, G. Feng, R. Zobl, G. Strasser, C. Rauch, Ch. Pacher, K. Unterrainer, and E. Gornik, "Plasmon-based terahertz emission from quantum well structures," Appl. Phys. Lett. 75, 1685 (1999).
15. A. Tredicucci, R. Kohler, L. Mahler, H. E. Beere, E. H. Linfield, and D. A. Ritchie, "Terahertz quantum cascade lasers - first demonstration and novel concepts," Semicond. Sci. Technol. 20, S222-S227 (2005).
16. S. J. Allen, Jr., D. S. Tsui, R. A. Logan, "Observation of the two-dimensional plasmon in silicon inversion layers," Phys. Rev. Lett. 38, 980-983 (1977).
17. T. N. Theis, "Plasmons in inversion layers," Surf. Sci. 98, 515-532 (1980).
18. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, "Nonresonant detection of terahertz radiation in field effect transistors," J. Appl. Phys. 91, 9346-9353 (2002).
19. W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M. S. Shur, C. A. Saylor, and L. C. Brunel, "Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor," Appl. Phys. Lett. 80, 3433-3435 (2002).
20. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, J. P. Eisenstein, "Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors," Appl. Phys. Lett. 81, 1627-1629 (2002).
21. T. Otsuji, M. Hanabe and O. Ogawara, "Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron- mobility transistors," Appl. Phys. Lett. 85, 2119 (2004).
22. F. Teppe, W. Knap, D. Veksler, and M.S. Shur, "Room-temperature plasma waves resonant detection of subterahertz radiation by nanometer field-effect transistor," Appl. Phys. Lett. 87, 052107 (2005).
23. E. A. Shaner, M. Lee, M. C. Wanke, A. D. Grine, J. L. Reno, S. J. Allen, "Single-quantum-well grating-gated terahertz plasmon detectors," Appl. Phys. Lett. 87, 193507 (2005).
24. A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, "Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors," Appl. Phys. Lett. 89, 131926 (2006).
25. W. Knap, F. Teppe, N. Dyakonova, D. Coquillat, J Łusakowski, "Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission", J. Phys.: Condens. Matter 20, 384205 (2008).
26. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, "Field effect transistors for terahertz detection: physics and first imaging applications," J. Infrared Milli. Terahz. Waves 30, 1319-1337 (2009).
27. V. Ryzhii, A. Satou, and M. Shur, "Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit- Time Effect," IEICE Trans. Electron. E89-C, 1012-1019 (2006).
28. V. Ryzhii, A. Satou, M. Ryzhii, T. Otsuji, and M. S. Shur, "Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels," J. Phys.: Condens. Matter 20, 384207 (2008).
29. V. Ryzhij, N.A. Bannov, and V.A. Fedirko, "Ballistic and quasiballistic transport in semiconductor structures," Sov. Phys. Semicond.18, 481-491 (1984).
30. A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, "AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources", J. Appl. Phys. 107, 024504 (2010).
31. A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap and H.G. Roskos, "Terahertz imaging with GaAs field-effect transistors," Electron. Lett. 44, 408-409 (2008).
32. A. Lisauskas, U. Pfeiffer, E. Öjefors, P. H. Bolìvar, D. Glaab, and H. G. Roskos, "Rational design of highresponsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors," J. Appl. Phys. 105, 114511 (2009).
33. E. Öjefors, U. R. Pfeiffer, A. Lisauskas, and H. G. Roskos, "A 0.65 THz focal-plane array in a quarter-micron CMOS process technology" IEEE J. Solid-State Circuits 44, No. 7, 1968-1976 (2009).
34. T. Otsuji, M. Hanabe, T. Nishimura and E. Sano, "A grating-bicoupled plasma-wave photomixer with resonantcavity enhanced structure," Opt. Express 14, 4815 (2006).
35. M. Hanabe, T. Nishimura, M. Miyamoto, T. Otsuji and E. Sano, "Structure-sensitive design for wider tunable operation of terahertz plasmon-resonant photomixer," IEICE Trans. Electron. E89-C, 985-992 (2006).
36. T. Otsuji, Y.M. Meziani, M. Hanabe, T. Ishibashi, T. Uno, and E. Sano, "Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems," Appl. Phys. Lett. 89, 263502 (2006).
37. Y. M. Meziani, Y. Otsuji, M. Hanabe, T. Ishibashi, T. Uno and E. Sano, "Room temperature generation of terahertz radiation from a grating-bicoupled device: size effect," Appl. Phys. Lett. 90, 061105 (2007).
38. Y. M. Meziani, T. Otsuji, M. Hanabe and E. Sano, "Threshold behavior of photoinduced plasmon-resonant selfoscillation in a new interdigitated grating gates device," Jpn. J. Appl. Phys. 46, 2409-2412 (2007).
39. T. Suemitsu, Yahya M. Meziani, Y. Hosono, M. Hanabe, T. Otsuji, E. Sano, "Novel plasmon-resonant terahertzwave emitter using a double-decked HEMT structure" 65th Device Research Conference (DRC) Dig., 157-158, Notre Dame, IN, USA, Jun. 18-20, 2007.
40. T. Otsuji, Y.M. Meziani, M. Hanabe, T. Nishimura, and E. Sano, "Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter," Solid State Electron. 51, 1319-1327 (2007).
41. Y.M. Meziani, M. Hanabe, T. Otsuji, and E. Sano, "Bolometric detection of terahertz radiation from new grating gates device," Physica Status. Solidi (c) 5, 282-285 (2008).
42. Y.M. Meziani, H. Handa, W. Knap. T. Otsuji, E. Sano, V.V. Popov, G.M. Tsymbalov, D. Coquillat, and F. Teppe, "Room temperature terahertz emission from grating coupled two-dimensional plasmons," Appl. Phys. Lett. 92, 201108 (2008).
43. T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y.M. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, V.V. Popov, D. Coquillat, and F. Teppe, "Broadband Terahertz Emission from Dual-Grating Gate HEMT's - Mechanism and Emission Spectral Profile," 66th Device Research Conference (DRC) Dig., pp. 263-264, Santa Barbara, CA, USA, Jun. 23-25, 2008.
44. T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano, V.V. Popov, "Emission of terahertz radiation from dual-grating-gates plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems," J. Phys.: Condens. Matter 20, 384206 (2008).
45. Y. Tsuda, T. Komori, A. El Fatimy, T. Suemitsu, and T. Otsuji, "Application of plasmonic microchip emitters to broadband terahertz spectroscopic measurement," J. Opt. Soc. Am. B 26, A52-A57 (2009).
46. D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, "Room temperature detection of sub-terahertz radiation in double-grating-gate transistors," Opt. Express. in press.
47. Jet Propulsion Laboratory, NASA, "JPL Catalog", http://spec.jpl.nasa.gov/ftp/pub/catalog/catform.html.
48. V. V. Popov, O. V. Polischuk, T. V. Teperik, X. G. Peralta, S. J. Allen, N. J. M. Horing, M. C. Wanke, "Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor," J. Appl. Phys. 94, 3556-3562 (2003).
49. V. V. Popov, G. M. Tsymbalov, M. S. Shur, "Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays," J. Phys.: Condens. Matter 20, 384208 (2008).