Structure and oscillatory multilayer relaxation of the bismuth (100) surface

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Sun, J ^a,h   Wang, J ^a   Wells, J ^b,c   Koroteev, Y M ^d,e   Bihlmayer, G ^c   Chulkov, E V ^f   Hofmann, Ph ^g   Pohl, K ^a  

^a UNIVERSITY OF NEW HAMPSHIRE   (United States)

^b AARHUS UNIVERSITY   (Denmark)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^d DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^e INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE   (Russian Federation)

^f FORSCHUNGSZENTRUM JÜLICH   (Germany)

^g CENTRO MIXTO CSIC UPV EHU   (Spain)

^h IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC SURFACE STATE; INTERLAYER SPACINGS; MULTILAYER RELAXATIONS; SCANNING TUNNELING MICROSCOPY (STM); THEORETICAL STUDY; TWO LAYERS;

BISMUTH; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRON DIFFRACTION; INTERFACIAL ENERGY; MULTILAYERS; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SOIL CONSERVATION; STRUCTURAL ANALYSIS;

SURFACE STRUCTURE;

EID: 77953605111     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/6/063016     Document Type: Article

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