Inspecting EUV mask blanks with a 193nm system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Stokowski, Stan ^a   Glasser, Joshua ^a   Inderhees, Gregg ^a   Sankuratri, Phani ^b  

^a KLA TENCOR CORPORATION   (United States)

^b Phani Sankuratri   (United States)

Author keywords

DUV inspection; EUV blank inspection; EUV multilayer roughness; particles; phase defects

Indexed keywords

DUV INSPECTION; EUV BLANK; EUV BLANK INSPECTION; EUV MULTILAYERS; PHASE DEFECTS;

MULTILAYERS; OXIDE MINERALS; PHOTOMASKS; QUARTZ; SILICON COMPOUNDS; SPHERES; SUBSTRATES; SURFACE DEFECTS; SURFACES;

INSPECTION;

EID: 77953426648     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850825     Document Type: Conference Paper

References (2)

1. Stokowski, S. and Wack, D, "Using a 193-nm inspection tool for multi-layer mask blank inspection," 2009 International EUVL Symposium, Prague, Czech Republic, 18-21 Oct 2009, SEMATECH and ISMI Proceedings Archives: Lithography
2. C. C. Lin, SEMATECH MBDC, private communication (October 2009)