High-peak-power room-temperature λ ∼ 3.6 μm inGaAsAlAs(Sb) quantum cascade lasers

IEEE Photonics Technology Letters

Volumn 22, Issue 11, 2010, Pages 757-759

  Revin, Dmitry G ^a   Zhang, Shiyong ^a   Commin, James Paul ^a   Kennedy, Kenneth ^a   Krysa, Andrey B ^a   Cockburn, John W ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Midinfrared emission; Quantum cascade laser (QCL); Short wavelength

Indexed keywords

BOUND-TO-CONTINUUM DESIGN; HIGH-REFLECTIVITY COATINGS; MID-INFRARED EMISSION; OPTICAL POWER; PEAK POWER; ROOM TEMPERATURE; SHORT WAVELENGTHS; STRAIN-COMPENSATED; VERTICAL TRANSITIONS; WALLPLUG EFFICIENCY;

GALLIUM;

QUANTUM CASCADE LASERS;

EID: 77953268853     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2045650     Document Type: Article

References (9)

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