X-ray dosimetric properties of vapor-grown CdGa 2S 4 single crystals

Inorganic Materials

Volumn 46, Issue 6, 2010, Pages 587-589

  Mustafaeva, S N ^a   Asadov, M M ^a   Guseinov, D T ^a  

^a INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77953255978     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S002016851006004X     Document Type: Article

References (3)

1. Georgobiani, A.N., Radautsan, S.I., and Tiginyanu, I.M., Wide-Gap Semiconductors: Optical and Photoelectric Properties and Potential Applications, Fiz. Tekh. Polupro-vodn. (Leningrad), 1985, vol.19, no.2, pp. 193-212.
2. 4 Single Crystals, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2003, vol.37, no.11, pp. 1321-1328.
3. Bodnar', I.V., Rud', V.Yu., and Rud', Yu.V., Growth and Properties of CdGa2S4 Single Crystals, Neorg. Mater., 2004, vol.40, no.2, pp. 144-148 [Inorg. Mater. (Engl. Transl.), vol.40, no. 2, pp. 102-106].