Device performances analysis of standard-cells transistors using silicon simulation and build-in device simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7641, Issue , 2010, Pages

  Shauly, Eitan N ^a,c   Parag, Allon ^a   Krispil, Uri ^b   Rotstein, Israel ^a  

^a TOWER SEMICONDUCTOR LTD   (Israel)

^b MENTOR GRAPHICS CORPORATION   (United States)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Electrical simulation; OPCCheck; Silicon simulation; SPICE

Indexed keywords

DEVICE MODELING; DEVICE PARAMETERS; DEVICE PERFORMANCE; DEVICE SIMULATIONS; DRIVE CURRENTS; EFFICIENT ANALYSIS; ELECTRICAL PARAMETER; ELECTRICAL SIMULATION; GENERAL PURPOSE; LARGE ARRAYS; OFF CURRENT; OPCCHECK; PROCESS ANALYSIS; PROCESS VARIABILITY; SILICON SIMULATION; SIMULATION TOOL; STANDARD CELL; STANDARD LOGIC;

COMPUTER SOFTWARE; ELECTRIC BATTERIES; FIELD EFFECT TRANSISTORS; MACHINE DESIGN; MODELS; STANDARDIZATION;

SPICE;

EID: 77953248131     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.845622     Document Type: Conference Paper

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