Characterization of highly strained nFET device performance and channel mobility with SMT

Journal of the Electrochemical Society

Volumn 157, Issue 7, 2010, Pages

  Lu, Chih Cheng ^a   Huang, Jiun Jia ^a   Luo, Wun Cheng ^a   Hou, Tuo Hung ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; DEVICE PERFORMANCE; ELECTRICAL PROPERTY; FUTURE TECHNOLOGIES; HIGHLY STRAINED; HYDROGEN CONTENTS; INTERFACE STATE; MOBILITY ENHANCEMENT; NITRIDE FILMS; PERFORMANCE ENHANCEMENTS; STRESS MEMORIZATION TECHNIQUES;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; NITRIDES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77953153411     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3416923     Document Type: Article

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