Damage recovery in ZnO by post-implantation annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 1842-1846

  Audren, A ^a   Hallen A ^b   Linnarsson, M K ^b   Possnert, G ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Dopant diffusion; Ion implantation; Radiation damage; RBS channeling; SIMS; ZnO

Indexed keywords

BULK SAMPLES; CO CONCENTRATIONS; CO DIFFUSION; CO IONS; DAMAGE RECOVERY; DOPANT DIFFUSION; FLUENCES; POSTIMPLANTATION ANNEALING; PROFILE EVOLUTION; RBS/CHANNELING; ROOM TEMPERATURE; RUTHERFORD BACKSCATTERING SPECTROMETRY; SOLUBILITY LIMITS; THERMAL TREATMENT; ZNO;

DIFFUSION; ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPECTROMETRY; ZINC OXIDE;

ANNEALING;

EID: 77953137219     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.032     Document Type: Article

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