Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells

Applied Surface Science

Volumn 256, Issue 18, 2010, Pages 5662-5666

  Mikolášek, Miroslav ^a   Racko, Juraj ^a   Harmatha, Ladislav ^a   Gašpierik, Pavol ^a   Šutta, Pavol ^b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

a Si:H c Si hetero junction; Broken symmetry; Defect states at the interface; Solar cell

Indexed keywords

DEFECTS; OPEN CIRCUIT VOLTAGE; SILICON SOLAR CELLS; SOLAR CELLS;

A-SI:H; A-SI:H/C-SI; BAND ALIGNMENTS; BAND OFFSETS; BROKEN SYMMETRY; DEFECT STATE; DOPING CONCENTRATION; SIMULATION STUDIES;

INTERFACE STATES;

EID: 77953136930     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.023     Document Type: Article

References (6)

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